EFFECTS OF RF-BIAS ON PROPERTIES OF SPUTTERED SILICON FILMS

被引：4

作者：

SUZUKI, M ^{[1
]}

MAEKAWA, T ^{[1
]}

OKANO, S ^{[1
]}

BANDOW, T ^{[1
]}

机构：

[1] ISHIKAWA TECH COLL,TSUBATA 92903,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 07期

关键词：

D O I：

10.1143/JJAP.20.L485

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L485 / L487

页数：3

共 8 条

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ANDERSON, DA ;

MODDEL, G ;

PAESLER, MA ;

PAUL, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03) :906-912

[2]

FRITZSCHE H, 1978, SOLID STATE TECHNOL, V21, P55

[3]

FRITZSCHE H, 1977, 7TH P INT C AM LIQ S, P3

[4] INFLUENCE OF DEPOSITION CONDITIONS ON SPUTTER-DEPOSITED AMORPHOUS SILICON [J].

PAWLEWICZ, WT .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5595-5601

[5] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].

SPEAR, WE ;

LECOMBER, PG .

SOLID STATE COMMUNICATIONS, 1975, 17 (09) :1193-1196

[6]

SPEAR WE, 1976, PHILOS MAG, V33, P953

[7] DOPING EFFECTS OF GROUP-III AND GROUP-V ELEMENT ON A-SI PREPARED BY HIGH-PRESSURE RF SPUTTERING [J].

SUZUKI, M ;

NAKAO, A ;

MAEKAWA, T ;

KUMEDA, M ;

SHIMIZU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :85-89

[8]

SUZUKI M, 1980, SOLID STATE COMMUN, V36, P369

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