POTENTIAL FLUCTUATIONS IN HETEROSTRUCTURE DEVICES

被引：247

作者：

NIXON, JA

DAVIES, JH

机构：

[1] Department of Electronics and Electrical Engineering, Glasgow University, Glasgow

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.41.7929

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The random positions of ionized-impurity ions in doped heterostructures give rise to a random potential, which we have analyzed using a self-consistent method that includes nonlinear screening. A two-dimensional electron gas becomes highly inhomogeneous as its average density is lowered, eventually breaking into isolated puddles and undergoing a classical metal-insulator transition. A quantum wire formed by split gates is strongly distorted by the random potential, impeding ballistic propagation. The wire becomes discontinuous before it is narrow enough to support monomode propagation. © 1990 The American Physical Society.

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页码：7929 / 7932

页数：4

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