LOW-TEMPERATURE FORMATION OF SILICON-NITRIDE AND OXIDE-FILMS BY THE SIMULTANEOUS USE OF A MICROWAVE ION-SOURCE AND AN ICB SOURCE

被引：4

作者：

ISHIKAWA, J ^{[1
]}

MATSUGATANI, K ^{[1
]}

TAKAOKA, G ^{[1
]}

机构：

[1] KYOTO UNIV,ION BEAM ENGN LAB,KYOTO 606,JAPAN

来源：

关键词：

D O I：

10.1016/0042-207X(89)91101-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1111 / 1113

页数：3

共 11 条

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