INTERSITE COULOMB REPULSION AND INTRASITE ATTRACTION FOR DX CENTERS IN GAAS

被引：11

作者：

MONROE, D

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 18期

关键词：

D O I：

10.1063/1.106047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The observed mobility increase in n-GaAs under hydrostatic pressure has been argued to favor a neutral DX center, since the pressure-induced electron-density reduction is then offset by reduced charged-center scattering. We show that the observations instead favor the negative-U model for DX: spatial correlations between the resulting negative and positive charges smooth the potential fluctuations and enhance the mobility.

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页码：2293 / 2295

页数：3

相关论文

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