ETALON ENHANCEMENT OF NONLINEAR OPTICAL-RESPONSE IN BI1-XSBX

被引:5
作者
YOUNGDALE, ER [1 ]
MEYER, JR [1 ]
HOFFMAN, CA [1 ]
BARTOLI, FJ [1 ]
PARTIN, DL [1 ]
THRUSH, CM [1 ]
HEREMANS, JP [1 ]
机构
[1] GM CORP,RES LABS,DEPT PHYS,WARREN,MI 48090
关键词
D O I
10.1063/1.105333
中图分类号
O59 [应用物理学];
学科分类号
摘要
Measurements of the nondegenerate four-wave mixing of CO2 laser beams in a Bi(1-x)Sb(x) film have yielded the largest high-power third-order nonlinear susceptibilities ever reported at that wavelength (chi(3) > 6 X 10(-4) esu at P0 > 2 X 10(5) W/cm2). Furthermore, an etalon effect resulting from the high reflectivity of the Bi(1-x)Sb(x) films at both the air and substrate interfaces leads to an additional enhancement of the four-wave signal by as much as a factor of 30. A theoretical model based on optical modulation of the free-carrier susceptibility gives results which are in excellent agreement with the data.
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页码:756 / 758
页数:3
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