1ST-PRINCIPLES STUDY OF THE ATOMIC RECONSTRUCTIONS OF ZNSE(100) SURFACES

被引:65
作者
PARK, CH
CHADI, DJ
机构
[1] NEC Research Institute, Princeton, NJ 08540
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 23期
关键词
D O I
10.1103/PhysRevB.49.16467
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We examine the reconstructions and surface energies of ZnSe(100) surfaces by first-principles total-energy calculations. The surface energies for the Zn- ana Se-terminated (1 X 1), (1 X 2), (2 X 1), (2 X 2), and Zn-terminated (4X2) reconstructed surfaces consisting of various combinations of dimers and vacancies are determined as a function of coverage and atomic chemical potential. For the Zn- and Se-terminated surfaces, dimerization lowers the energies by 2.12 and 1.08 eV per dimer, respectively. When exchange with bulk Zn or Se reservoirs is considered, a c(2 X 2) Zn-vacancy structure is found to be energetically more favorable than a dimer structure for the Zn-terminated surface, while a (2 X 1) dimer structure is the most favorable one for the Se-terminated surface.
引用
收藏
页码:16467 / 16473
页数:7
相关论文
共 43 条
[1]  
[Anonymous], 1937, EINF HRUNG QUANTENCH
[2]   SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].
ARTHUR, JR .
SURFACE SCIENCE, 1974, 43 (02) :449-461
[3]   RELATIVISTIC NORM-CONSERVING PSEUDOPOTENTIALS [J].
BACHELET, GB ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 25 (04) :2103-2108
[4]   SURFACE PHASES OF GAAS(100) AND ALAS(100) [J].
BACHRACH, RZ ;
BAUER, RS ;
CHIARADIA, P ;
HANSSON, GV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :797-801
[5]   SEMICONDUCTOR SURFACE AND CRYSTAL PHYSICS STUDIED BY MBE [J].
BACHRACH, RZ .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2) :115-144
[6]   ABINITIO THEORY OF THE SI(111)-(7X7) SURFACE RECONSTRUCTION - A CHALLENGE FOR MASSIVELY PARALLEL COMPUTATION [J].
BROMMER, KD ;
NEEDELS, M ;
LARSON, BE ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW LETTERS, 1992, 68 (09) :1355-1358
[7]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[8]   SI(100) SURFACES - ATOMIC AND ELECTRONIC-STRUCTURES [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1290-1296
[9]   ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1979, 43 (01) :43-47
[10]   ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :834-837