PREPARATION OF N-TYPE DOPED FES2 THIN-FILMS

被引：42
|
作者：
FERRER, IJ
CABALLERO, F
HERAS, CD
SANCHEZ, C
机构：
[1] Dpto. de Física de Materiales, C-IV, U.A.M. Cantoblanco
来源：
SOLID STATE COMMUNICATIONS | 1994年 / 89卷 / 04期
关键词：
D O I：
10.1016/0038-1098(94)90598-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
N-type pyrite thin films have been prepared by sulfuration at 350 degrees C of flash evaporated Fe-X (X =Al, Cu, Ni) layers. Physical and structural properties have been investigated. XRD showed pyrite structure. Room temperature dark resistivity of the films varies from 0.21 to 7.10(-4) Omega.cm depending on the impurity concentration. Hall mobilities are between 1 and 10(4) cm(2)/V.s. Optical properties are also drastically affected by doping.
引用
收藏
页码：349 / 352
页数：4
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