COMPOSITIONAL DEPENDENCE OF THE ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y

被引：57

作者：

LEHENY, RF

BALLMAN, AA

DEWINTER, JC

NAHORY, RE

POLLACK, MA

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 03期

关键词：

D O I：

10.1007/BF02652936

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：561 / 568

页数：8

共 12 条

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[3]

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[6] ALLOY SCATTERING AND HIGH-FIELD TRANSPORT IN TERNARY AND QUATERNARY 3-5 SEMICONDUCTORS [J].

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[7]

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Pearsall T. P., 1979, Gallium Arsenide and Related Compounds 1978, P94

[9]

PEREA EH, 1979, 21ST EL MAT C BOULD, P55

[10] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].

POLLACK, MA ;

NAHORY, RE ;

DEWINTER, JC ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :314-316

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