INVESTIGATION OF IMPERFECTIONS IN SILICON SUBSTRATES USING COPPER DISPLACEMENT TECHNIQUE AND X-RAY TOPOGRAPHY

被引：0
|
作者：
GRIECO, MJ
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C223 / &
相关论文
共 50 条
  • [21] X-ray synchrotron topography investigation of porous silicon formed by patterning in localized areas
    Milita, S
    Maccagnani, P
    Angelucci, R
    Servidori, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (08) : G439 - G446
  • [22] X-RAY TOPOGRAPHY OF FERROMAGNETIC DOMAINS OF SILICON IRON
    MAKAROV, VP
    MOLOTILO.BV
    SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1970, 14 (06): : 945 - &
  • [23] Recent progress in x-ray topography for silicon materials
    Kawado, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 : 520 - 525
  • [24] X-RAY SECTION TOPOGRAPHY OF HYDROGEN PRECIPITATES IN SILICON
    CUI, SF
    GREEN, GS
    TANNER, BK
    CHARACTERIZATION OF THE STRUCTURE AND CHEMISTRY OF DEFECTS IN MATERIALS, 1989, 138 : 71 - 76
  • [25] Live X-ray topography and crystal growth of silicon
    Chikawa, Jun-Ichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (08): : 4619 - 4631
  • [26] HIGH-TEMPERATURE X-RAY TOPOGRAPHY OF SILICON
    GRIENAUER, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : C97 - +
  • [27] Observation of macrodefects in silicon by the methods of X-ray topography
    Mil'vidskij, M.G.
    Osip'yan, Yu.A.
    Smirnova, I.A.
    Suvorov, E.V.
    Shulakov, E.V.
    Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya, 2001, (06): : 5 - 12
  • [28] Live X-ray topography and crystal growth of silicon
    Chikawa, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (08): : 4619 - 4631
  • [29] X-RAY TOPOGRAPHY OF DEFORMATION OF SILICON PRODUCED BY INDENTATION
    WATTENBE.U
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 1972, 28 : S169 - S169
  • [30] X-RAY INVESTIGATION OF PERFECTION OF SILICON
    PATEL, JR
    MOSS, S
    WAGNER, RS
    ACTA METALLURGICA, 1962, 10 (SEP): : 759 - &
12345