ELECTRONIC STRUCTURE OF DEFECT CENTERS IN SIO2

被引：120
作者：
BENNETT, AJ
ROTH, LM
机构：
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1971年 / 32卷 / 06期
关键词：
D O I：
10.1016/S0022-3697(71)80182-8
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：1251 / &
相关论文
共 26 条
[1]   PROPERTIES OF VITREOUS SILICA - ANALYSIS OF RANDOM NETWORK MODELS [J].
BELL, RJ ;
DEAN, P .
NATURE, 1966, 212 (5068) :1354-&
[2]  
BELL T, 1962, PHYS CHEM GLASSES-B, V3, P141
[3]  
BENNETT AJ, TO BE PUBLISHED
[4]   CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].
DEAL, BE ;
SKLAR, M ;
GROVE, AS ;
SNOW, EH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+
[5]   SILICON-SILICON DIOXIDE SYSTEM [J].
GRAY, PV .
PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1543-+
[6]   EXTENDED HUCKEL THEORY .3. COMPOUNDS OF BORON + NITROGEN [J].
HOFFMAN, R .
JOURNAL OF CHEMICAL PHYSICS, 1964, 40 (09) :2474-&
[7]   AN EXTENDED HUCKEL THEORY .I. HYDROCARBONS [J].
HOFFMANN, R .
JOURNAL OF CHEMICAL PHYSICS, 1963, 39 (06) :1397-&
[8]   THEORY OF POLYHEDRAL MOLECULES .1. PHYSICAL FACTORIZATIONS OF SECULAR EQUATION [J].
HOFFMANN, R ;
LIPSCOMB, WN .
JOURNAL OF CHEMICAL PHYSICS, 1962, 36 (08) :2179-&
[9]   SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].
KOHN, W .
SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320
[10]  
KOOI E, 1966, PHILIPS RES REP, V21, P477
123