INVESTIGATION OF SHORT-PERIOD ALAS/GAAS SUPERLATTICES AS CONDUCTION-BAND BARRIERS

被引：0
作者：
PAULUS, MJ
HUANG, CI
BOZADA, CA
CHENEY, ME
DUDLEY, SC
STUTZ, CE
EVANS, KR
JONES, RL
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期
关键词：
D O I：
10.1116/1.584737
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：299 / 305
页数：7
相关论文
共 17 条
[1]   OBSERVATION OF RESONANT TUNNELING THROUGH GAAS QUANTUM-WELL STATES CONFINED BY AIA X-POINT BARRIERS [J].
BONNEFOI, AR ;
MCGILL, TC ;
BURNHAM, RD ;
ANDERSON, GB .
APPLIED PHYSICS LETTERS, 1987, 50 (06) :344-346
[2]   THE VARIABLY SPACED SUPERLATTICE ELECTROLUMINESCENT DISPLAY - A NEW HIGH-EFFICIENCY ELECTROLUMINESCENCE SCHEME [J].
BRENNAN, KF ;
SUMMERS, CJ .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (12) :5410-5418
[3]  
CASEY HC, 1978, HETEROSTRUCTURE LA A
[4]   X-POINT EXCITONS IN AIAS/GAAS SUPERLATTICES [J].
FINKMAN, E ;
STURGE, MD ;
TAMARGO, MC .
APPLIED PHYSICS LETTERS, 1986, 49 (19) :1299-1301
[5]   PHOTOLUMINESCENCE OF GAAS SINGLE QUANTUM WELLS CONFINED BY SHORT-PERIOD ALL-BINARY GAAS/ALAS SUPERLATTICES [J].
FUJIWARA, K ;
PLOOG, K .
APPLIED PHYSICS LETTERS, 1984, 45 (11) :1222-1224
[6]   IMPROVED HETEROINTERFACE AND VERTICAL TRANSPORT IN GAAS SINGLE QUANTUM WELL CONFINED BY ALL-BINARY GAAS/ALAS SHORT-PERIOD-SUPERLATTICES [J].
FUJIWARA, K ;
DEMIGUEL, JL ;
PLOOG, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L405-L407
[7]   LARGE ROOM-TEMPERATURE EFFECTS FROM RESONANT TUNNELING THROUGH ALAS BARRIERS [J].
GOODHUE, WD ;
SOLLNER, TCLG ;
LE, HQ ;
BROWN, ER ;
VOJAK, BA .
APPLIED PHYSICS LETTERS, 1986, 49 (17) :1086-1088
[8]   NEGATIVE CHARGE, BARRIER HEIGHTS, AND THE CONDUCTION-BAND DISCONTINUITY IN ALXGA1-XAS CAPACITORS [J].
HICKMOTT, TW ;
SOLOMON, PM ;
FISCHER, R ;
MORKOC, H .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2844-2853
[9]   INVESTIGATIONS OF DOUBLE BARRIER RESONANT TUNNELING DEVICES BASED ON (ALGA)AS/GAAS [J].
HUGHES, OH ;
HENINI, M ;
ALVES, ES ;
EAVES, L ;
LEADBEATER, ML ;
FOSTER, TJ ;
SHEARD, FW ;
TOOMBS, GA ;
CELESTE, A ;
PORTAL, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1161-1164
[10]   EFFECTS OF THE LAYER THICKNESS ON THE ELECTRONIC CHARACTER IN GAAS-ALAS SUPERLATTICES [J].
IHM, J .
APPLIED PHYSICS LETTERS, 1987, 50 (16) :1068-1070
12