MAJORITY-CARRIER CAMEL DIODE

被引：123

作者：

SHANNON, JM

机构：

[1] Philips Research Laboratories, Redhill, Surrey

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 01期

关键词：

D O I：

10.1063/1.90931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A majority-carrier diode concept is described in which current flow is controlled by a potential hump in the bulk of a semiconductor. Devices of this type, called camel diodes, having ideality factors <2 have been realized using low-energy ion implantation.

引用

页码：63 / 65

页数：3