ELECTRON-BEAM TESTING OF INTEGRATED-CIRCUITS

被引：1
|
作者：
REHME, H
机构：
[1] Electron Optical Analysis Group of Siemems AG, Forschungs Laboratorien, D-8000 München 83
来源：
PHYSICS IN TECHNOLOGY | 1979年 / 10卷 / 03期
关键词：
D O I：
10.1088/0305-4624/10/3/I02
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Discusses nondestructive testing of LSI circuits by means of electron beam probes. The principles of voltage contrast pattern measurements, stroboscope techniques, quantitative voltage measurement and measurement of voltage against time are outlined and the design of a complete electron-beam test system is illustrated. The applications of electron beam testing to failure analysis when electrical measurements have shown an IC to be defective, and to function testing when circuit elements of a newly developed IC have to be checked are described.
引用
收藏
页码：97 / 103
页数：7
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