BALLISTIC-ELECTRON-EMISSION MICROSCOPY STUDY OF THE AU/SI(111)7X7 AND AU/CAF2/SI(111)7X7 INTERFACES

被引：24

作者：

CUBERES, MT ^{[1
]}

BAUER, A ^{[1
]}

WEN, HJ ^{[1
]}

PRIETSCH, M ^{[1
]}

KAINDL, G ^{[1
]}

机构：

[1] CSIC,INST CIENCIA MAT,E-28006 MADRID,SPAIN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 17期

关键词：

D O I：

10.1063/1.111650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ballistic-electron emission microscopy (BEEM) has been performed on Au/n-Si(111)7 x 7 and Au/CaF2/n-Si(111)7 x 7 in UHV. In both cases, the topography of the Au surface is characterized by almost-equal-to 2.5 angstrom height terraces, stacked in several stages, with rounded shapes for Au/Si, and hexagonal shapes for Au/CaF2/Si. BEEM up to tip voltages of 8 V on Au/Si is not altering the ballistic transmissivity, in contrast to previous work on Au/Si interfaces which involved chemical preparations of the Si surfaces. The shape of the BEEM spectra on Au/CaF2/Si depends on spectral features of the density of states of the CaF2 thin film.

引用

页码：2300 / 2302

页数：3

共 24 条

[1] THE ELECTRONIC-PROPERTIES OF THE CAF2-SI(111) SYSTEM - FROM MONOLAYER COVERAGE TO SOLID SOLID INTERFACE [J].