EVOLUTION OF LOW-FLUENCE HEAVY-ION DAMAGE IN SI UNDER HIGH-ENERGY ION IRRADIATION

被引：4

作者：

BATTAGLIA, A ^{[1
]}

PRIOLO, F ^{[1
]}

SPINELLA, C ^{[1
]}

RIMINI, E ^{[1
]}

机构：

[1] DIPARTIMENTO FIS,I-95129 CATANIA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96242-D

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The annealing of low-fluence heavy-ion damaged Si crystals induced by ion-assisted treatments is reported. Damage was produced by 150 keV Au implantations at a dose of 2 x 10(13) ions/cm2 onto <100> oriented Si single crystals and resulted in small amorphous-like regions surrounded by crystal material. The interaction of these damaged structures with defects induced by energetic ions (600 keV Kr2+) was investigated. Kr post-irradiation resulted in either damage accumulation or annealing, depending on the substrate temperature. A transition temperature of about 420 K was found between these two different regimes. Ion-assisted processes are discussed and explained on the basis of the damage morphology.

引用

页码：611 / 614

页数：4

共 11 条

[1] ION-INDUCED ANNEALING AND AMORPHIZATION OF ISOLATED DAMAGE CLUSTERS IN SI [J].