FRACTURE-TOUGHNESS OF SILICON

被引:0
作者
CHEN, CP
LEIPOLD, MH
机构
来源
AMERICAN CERAMIC SOCIETY BULLETIN | 1980年 / 59卷 / 04期
关键词
D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The purpose of the present study was to determine the fracture toughness and to characterize fracture modes of silicon as a function of the orientation of single-crystal and polycrystalline material. Silicon is used in manufacture of solar cells and other photovoltaic sensors.
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页码:469 / 472
页数:4
相关论文
共 11 条
[1]   PRECISION LATTICE CONSTANT DETERMINATION [J].
BOND, WL .
ACTA CRYSTALLOGRAPHICA, 1960, 13 (10) :814-818
[2]  
CHEN TJ, 1978, 954836781 CONTR
[3]   DIRECT MEASUREMENTS OF THE SURFACE ENERGIES OF CRYSTALS [J].
GILMAN, JJ .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) :2208-2218
[4]   SURFACE ENERGY OF GERMANIUM AND SILICON [J].
JACCODINE, RJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :524-527
[5]  
KOBAYASHI AS, 1976, 2ND P INT C MECH BEH, P1073
[6]  
MYERS RJ, 1977, FRACTURE 1977 B, V3, P1001
[7]   CONTROLLED SURFACE FLAWS IN HOT-PRESSED SIC [J].
PETROVIC, JJ ;
JACOBSON, LA .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1976, 59 (1-2) :34-37
[8]   CONTROLLED SURFACE FLAWS IN HOT-PRESSED SI3N4 [J].
PETROVIC, JJ ;
JACOBSON, LA ;
TALTY, PK ;
VASUDEVAN, AK .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1975, 58 (3-4) :113-116
[9]  
RICE RW, 1974, FRACTURE MECHANICS C, V1, P323
[10]  
SHAH RC, 1972, STP513 ASTM, P3