ELECTROCHEMICALLY DEPOSITED COPPER SCHOTTKY CONTACTS ON N-TYPE GAAS FOR ELECTRON-BEAM-INDUCED CURRENT MEASUREMENTS

Using potentiodynamic and electrocrystallization techniques, Cu is plated onto n‐GaAs(100) surfaces. The Cu/n‐GaAs Schottky diodes exhibit ideality factors typically of 1.10 and large barrier heights (≧ 0.99 V). The barrier formation is discussed in terms of models of metal‐induced gap states. The utilization of as‐made diodes for EBIC measurements based on the planar‐collector geometry is demonstrated. From the primary‐energy dependence of the EBIC collection efficiency, an accurate value for the hole diffusion length is determined. This indicates that Cu electroplating induces a negligible defect density. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA