HIGH-POWER EXTREMELY SHALLOW QUANTUM-WELL MODULATORS

被引：39

作者：

GOOSSEN, KW ^{[1
]}

CHIROVSKY, LMF ^{[1
]}

MORGAN, RA ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

JAN, WY ^{[1
]}

机构：

[1] AT&T BELL LABS,BREINIGSVILLE,PA 18031

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 05期

关键词：

D O I：

10.1109/68.93874

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We find that extremely shallow quantum wells (QW's) are capable of modulating high-intensity light due to the enhanced sweep out of photogenerated carriers. These QW's are especially well suited for use in self-electrooptic effect devices (SEED's) due to the existence of a strong room-temperature exciton that ionizes rapidly with field. For a 3-mu-m-diameter spot, we obtain bistable reflectivity changes (for a symmetric-SEED arrangement using a 7 V power supply) of 18% at 1 mW (24 kW/cm2), 10% at 2 mW, and 4% at 3 mW compared to 6.8% at 0.4 mW for our previous best sample.

引用

页码：448 / 450

页数：3

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