OPTICAL-DETECTION OF GROWTH OSCILLATIONS IN HIGH-VACUUM METALORGANIC VAPOR-PHASE EPITAXY

被引：28
作者：
JONSSON, J
DEPPERT, K
JEPPESEN, S
PAULSSON, G
SAMUELSON, L
SCHMIDT, P
机构：
[1] Department of Solid State Physics, University of Lund, Box 118
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 24期
关键词：
D O I：
10.1063/1.102895
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first measurements of growth oscillations in high vacuum metalorganic vapor phase epitaxy (MOVPE). The reflection difference response of the surface is used for real-time monitoring of the layer-by-layer growth of GaAs from triethylgallium (TEG) and arsine. The frequency of the optically detected growth oscillations is found to be proportional to the flux of TEG and to the growth rate. We expect our results to extend the more limited ranges of applicability offered by reflection high-energy electron diffraction to allow the study of growth oscillations also in other MOVPE-related growth techniques.
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页码：2414 / 2416
页数：3
相关论文
共 9 条
[1]   ANISOTROPIES IN THE ABOVE BAND-GAP OPTICAL-SPECTRA OF CUBIC SEMICONDUCTORS [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW LETTERS, 1985, 54 (17) :1956-1959
[2]   REFLECTANCE DIFFERENCE STUDIES OF ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION GROWTH TRANSIENTS ON (001) GAAS [J].
ASPNES, DE ;
BHAT, R ;
COLAS, E ;
KERAMIDAS, VG ;
KOZA, MA ;
STUDNA, AA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :711-716
[3]   A NEW LOW-TEMPERATURE III-V MULTILAYER GROWTH TECHNIQUE - VACUUM METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
FRAAS, LM .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6939-6343
[4]   OSCILLATIONS IN THE OPTICAL-RESPONSE OF (001)GAAS AND ALGAAS SURFACES DURING CRYSTAL-GROWTH BY MOLECULAR-BEAM EPITAXY [J].
HARBISON, JP ;
ASPNES, DE ;
STUDNA, AA ;
FLOREZ, LT ;
KELLY, MK .
APPLIED PHYSICS LETTERS, 1988, 52 (24) :2046-2048
[5]  
MADHUKAR A, 1988, MATER RES SOC S P, V102, P3
[6]   DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].
NEAVE, JH ;
JOYCE, BA ;
DOBSON, PJ ;
NORTON, N .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8
[7]  
SCHMIDT P, 1990, IN PRESS J CRYST GRO
[8]  
SCHMIDT P, 1989, 2ND P INT C CBE REL
[9]   OBSERVATIONS ON INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING CHEMICAL BEAM EPITAXY [J].
TSANG, WT ;
CHIU, TH ;
CUNNINGHAM, JE ;
ROBERTSON, A .
APPLIED PHYSICS LETTERS, 1987, 50 (19) :1376-1378
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