OPTICAL AND ELECTRICAL CHARACTERIZATION OF BSO CRYSTALS

被引：5

作者：

SAWADA, T

HIRAO, T

OHARA, H

UJIHARA, K

机构：

[1] Department of Electronics Engineering, University of Electro-Communications, Chofu, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 01期

关键词：

Bi[!sub]12[!/sub]SiO[!sub]20[!/sub; Diffraction efficiency; Electrical properties; Phase conjugate wave; Photorefractive crystal;

D O I：

10.1143/JJAP.29.108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical and electrical properties of undoped BSO crystals were simultaneously measured and compared. Material parameters determined from optical measurements such as steady-state diffraction efficiency versus light-induced grating spacing and recording time versus light-induced grating spacing characteristics agree well with those determined from electrical measurements, including steady-state photocurrent under a uniform illumination and interference fringe illumination, and transient photocurrent after application of a short light pulse, when a simple band transport model is used for the analyses. The result indicates that the simple electrical measurements are useful for rapid assessment of the crystal as well as for predicting the photorefractive properties. © 1990 IOP Publishing Ltd.

引用

页码：108 / 115

页数：8

共 19 条

[1] EXPERIMENTAL-OBSERVATIONS OF TRAPPING LEVELS IN BSO [J].