STUDY OF GROWTH-CONDITIONS OF SILICON-CARBIDE EPITAXIAL LAYERS

被引：18
作者：
SAIDOV, MS
SHAMURATOV, KA
KADYROV, MA
机构：
[1] Uzbek Acad of Sciences, Tashkent, USSR, Uzbek Acad of Sciences, Tashkent, USSR
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 87卷 / 04期
关键词：
D O I：
10.1016/0022-0248(88)90099-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
3
引用
收藏
页码：519 / 522
页数：4
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