METALORGANIC SULFUR SOURCES FOR THE DOPING OF GAAS GROWN BY CHEMICAL BEAM EPITAXY

被引：5

作者：

JOYCE, TB ^{[1
]}

PFEFFER, T ^{[1
]}

BULLOUGH, TJ ^{[1
]}

JONES, AC ^{[1
]}

机构：

[1] EPICHEM LTD,WIRRAL L62 3QF,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 135卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)90722-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the use of metalorganic sulphur precursors for the n-type doping of GaAs in chemical beam epitaxy (CBE) and demonstrate that these liquid sources have a number of advantages over H2S. The incorporation efficiency of sulphur from a range of such precursors has been evaluated and was found to be strongly dependent on the nature of the alkyl group bound to sulphur. The incorporation of sulphur from these new sources was found to be independent of temperature in the range 450-600-degrees-C.

引用

页码：31 / 35

页数：5

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