EFFECTS OF OXYGEN IMPLANTATION IN GAAS

被引：6

作者：

HE, L

ANDERSON, WA

机构：

[1] State University of New York at Buffalo, Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, Amherst, NY 14260

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 02期

关键词：

D O I：

10.1016/0038-1101(93)90136-E

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oxygen implantation in GaAs has been studied by deep level transient spectroscopy (DLTS) and current-voltage (I-V) characterization. The effect of ion dose on material electrical properties was investigated by low dose implantation at 10(10), 10(11) and 10(12) ions/cm2 with energies of 50 and 100 keV. Post-implantation annealing was studied by rapid thermal annealing (RTA) treatment at 550-degrees-C. Both n and n+ GaAs substrates were used to study the influence of substrate doping. Improved I-V characteristics were observed in diodes made from all as-implanted n-GaAs samples which implies the reduction of carrier concentration. At low dose implantation to n-GaAs, no induced trap levels were detected. The carrier compensation effect was explained by free carrier trapping. Therefore, residual trap elimination and carrier removal took place. At higher dose implantation in n-GaAs, two new hole traps were detected. RTA treatment showed the above compensation effect to be cancelled at a temperature of 550-degrees-C which indicated the compensation to be caused mostly by damage-related defects. For n+-GaAs, a higher dose is necessary for equal carrier compensation compared with lower doped n-GaAs. Additional electron traps were found for 10(11) and 10(12) ions/cm2 implanted in n+-GaAs which were damage-induced defect-related.

引用

页码：173 / 178

页数：6

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