PREPARATION OF THIN LAYERS OF GE AND SI BY CHEMICAL HYDROGEN PLASMA TRANSPORT

被引：210

作者：

VEPREK, S

MARECEK, V

机构：

[1] Institute of Physics, Czechoslovakia Academy of Sciences, Prague

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 07期

关键词：

D O I：

10.1016/0038-1101(68)90071-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It has been proved that the transport of Ge and Si in hydrogen plasma takes place under certain conditions. The transport is probably carried on by volatile hydrides of Ge and Si which are formed during the interaction of hydrogen plasma and the respective semiconductor. The semiconductor layers prepared by this method are compact and well adhesive to the substrate. When deposited on glass they had a polycrystalline structure. © 1968.

引用

页码：683 / &