ANTISITE DEFECT IN GAAS AND AT THE GAAS-ALAS INTERFACE

被引:9
作者
LINCHUNG, PJ
REINECKE, TL
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期
关键词
D O I
10.1116/1.571035
中图分类号
O59 [应用物理学];
学科分类号
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页码:443 / 446
页数:4
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