ANTISITE DEFECT IN GAAS AND AT THE GAAS-ALAS INTERFACE

被引：9
作者：
LINCHUNG, PJ
REINECKE, TL
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期
关键词：
D O I：
10.1116/1.571035
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：443 / 446
页数：4
相关论文
共 50 条
[31]   SEQUENTIAL RESONANT TUNNELING OF HOLES IN GAAS-ALAS SUPERLATTICES [J].
SCHNEIDER, H ;
GRAHN, HT ;
VONKLITZING, K ;
PLOOG, K .
PHYSICAL REVIEW B, 1989, 40 (14) :10040-10043
[32]   CAPACITANCE-VOLTAGE CHARACTERISTICS OF GAAS-ALAS HETEROSTRUCTURES [J].
WOODWARD, TK ;
SCHLESINGER, TE ;
MCGILL, TC ;
BURNHAM, RD .
APPLIED PHYSICS LETTERS, 1985, 47 (06) :631-633
[33]   ELECTRONIC-STRUCTURE OF GAAS-ALAS REPEATED HETEROSTRUCTURE [J].
CARUTHERS, E ;
LINCHUNG, PJ .
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03) :422-422
[34]   Electron localization and anisotropic magnetoconductivity in GaAs-AlAs superlattices [J].
Gougam, AB ;
Sicart, J ;
Robert, JL ;
Etienne, B .
PHYSICAL REVIEW B, 1999, 59 (23) :15308-15311
[35]   On the operational and manufacturing tolerances of GaAs-AlAs MQW modulators [J].
Goossen, KW ;
Cunningham, JE ;
Jan, WY ;
Leibenguth, R .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (03) :431-438
[36]   PLASMON-PHONON COUPLING IN GAAS-ALAS SUPERLATTICES [J].
LOU, B .
SOLID STATE COMMUNICATIONS, 1992, 84 (06) :685-690
[37]   STARK LADDERS IN STRONGLY COUPLED GAAS-ALAS SUPERLATTICES [J].
DEGANI, MH .
APPLIED PHYSICS LETTERS, 1991, 59 (01) :57-59
[38]   INTERBAND-TRANSITIONS IN ULTRATHIN GAAS-ALAS SUPERLATTICES [J].
ALOUANI, M ;
GOPALAN, S ;
GARRIGA, M ;
CHRISTENSEN, NE .
PHYSICAL REVIEW LETTERS, 1988, 61 (14) :1643-1646
[39]   STRUCTURAL STUDIES OF GAAS-ALAS SUPERLATTICES GROWN BY MBE [J].
FEWSTER, PF ;
GOWERS, JP ;
HILTON, D ;
FOXON, CT .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :120-120
[40]   Negative magnetoresistance and electron localization in GaAs-AlAs superlattices [J].
Gougam, AB ;
Gandit, P ;
Sicart, J ;
Robert, JL .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (03) :231-238
12345