ANTISITE DEFECT IN GAAS AND AT THE GAAS-ALAS INTERFACE

被引：9
作者：
LINCHUNG, PJ
REINECKE, TL
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期
关键词：
D O I：
10.1116/1.571035
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：443 / 446
页数：4
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