OPTICALLY DETECTED MAGNETIC-RESONANCE OF DISLOCATIONS IN SILICON

被引：2

作者：

KVEDER, V ^{[1
]}

OMLING, P ^{[1
]}

GRIMMEISS, HG ^{[1
]}

OSIPYAN, YA ^{[1
]}

机构：

[1] ACAD SCI USSR,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,USSR

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.43.6569

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The observation of optically detected magnetic resonance (ODMR) signals directly correlated with dislocations in silicon is reported. The ODMR signals are identified as resonance from free electrons, dangling bonds, and quasifree holes bound to a one-dimensional potential in straight dislocations. It is shown that at least a part of the 0.8-1.0-eV photoluminescence observed in dislocated silicon is directly correlated with dislocations.

引用

页码：6569 / 6572

页数：4

共 14 条

[1]

BARANOV PG, 1977, JETP LETT+, V26, P249

[2] OPTICALLY DETECTED MAGNETIC-RESONANCE (ODMR) INVESTIGATIONS OF RECOMBINATION PROCESSES IN SEMICONDUCTORS [J].

CAVENETT, BC .

ADVANCES IN PHYSICS, 1981, 30 (04) :475-538

[3] MODIFICATION OF THE DISLOCATION LUMINESCENCE SPECTRUM BY OXYGEN ATMOSPHERES IN SILICON [J].

DROZDOV, NA ;

PATRIN, AA ;

TKACHEV, VT .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01) :K63-K65

[4]

DROZDOV NA, 1976, JETP LETT+, V23, P597

[5]

IZOTOV AN, 1986, FIZ TVERD TELA+, V28, P655

[6]

IZOTOV AN, UNPUB

[7]

KAPLAN P, 1978, J PHYS LETT-PARIS, V639, pL51

[8]

KVEDER VV, 1989, ZH EKSP TEOR FIZ+, V95, P183

[9]

KVEDER VV, 1985, ZH EKSP TEOR FIZ+, V61, P182

[10]

KVEDER VV, 1982, ZH EKSP TEOR FIZ, V56, P389

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