POST GROWTH TAILORING OF THE OPTICAL-PROPERTIES OF GAAS-ALGAAS MULTIPLE QUANTUM-WELLS

被引：2

作者：

GHISONI, M ^{[1
]}

GIBSON, M ^{[1
]}

RIVERS, A ^{[1
]}

BOYD, IW ^{[1
]}

PARRY, G ^{[1
]}

ROBERTS, JS ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S13 3JD,ENGLAND

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 14期

关键词：

Gallium arsenide; Integrated optics;

D O I：

10.1049/el:19900685

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The post-growth bandgap engineering of a fifty period multiple quantum well is reported. A controlled blue shift of the band edge is achieved through the deposition of a SiOx encapsulant followed by rapid thermal annealing giving shifts of up to 16meV. The expected depth dependence of this process is not observed and thus the blue shifted samples retain clearly resolved room temperature excitonic features and preserve the quantum confined Stark effect. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1058 / 1059

页数：2

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