ELECTRICAL PROPERTIES OF SILICON DOPED WITH PLATINUM

被引：44

作者：

CARCHANO, H

JUND, C

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(70)90012-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：83 / &

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