Growth and characteristics of p-type doped GaAs nanowire

被引：0

作者：

Li, Bang ^{[1
]}

Yan, Xin ^{[1
]}

Zhang, Xia ^{[1
]}

Ren, Xiaomin ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2018年 / 39卷 / 05期

基金：

中国国家自然科学基金;

关键词：

nanowire; GaAs; p-doped; VLS;

D O I：

10.1088/1674-4926/39/5/053004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is observed under high DEZn flow. In addition, the I-V curves of GaAs NWs has been measured and the p-type dope concentration under the II/III ratio of 0.013 and 0.038 approximated to 10(19)-10(20) cm(-3).

引用

页数：4

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