PHENOMENA PRODUCED BY ION-BOMBARDMENT IN PLASMA-ASSISTED ETCHING ENVIRONMENTS

[1] SPUTTERING OF CHLORINATED SILICON SURFACES STUDIED BY SECONDARY ION MASS-SPECTROMETRY AND ION-SCATTERING SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1336 - 1342

[2] ION ENHANCED REACTIVE ETCHING OF TUNGSTEN SINGLE-CRYSTALS AND FILMS WITH XEF2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1921 - 1924

[3] THE ROLE OF ENERGETIC ION-BOMBARDMENT IN SILICON-FLUORINE CHEMISTRY [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 27 (01) : 243 - 248

[4] STUDIES ON THE MECHANISM OF CHEMICAL SPUTTERING OF SILICON BY SIMULTANEOUS EXPOSURE TO CL-2 AND LOW-ENERGY AR+ IONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1384 - 1392

[5] STUDIES OF CHEMI-LUMINESCENCE ACCOMPANYING FLUORINE ATOM ETCHING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5273 - 5276

[6] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[7] MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 174 - 176

[8] ON THE RELATIVE IMPORTANCE OF PHYSICAL AND CHEMICAL SPUTTERING DURING ION-ENHANCED ETCHING OF SILICON BY XEF2 [J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1838 - 1840

[9] ARGON-ION ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3813 - 3818

[10] LEE YH, 1985, APPL PHYS LETT, V46, P260, DOI 10.1063/1.95918

[1] SPUTTERING OF CHLORINATED SILICON SURFACES STUDIED BY SECONDARY ION MASS-SPECTROMETRY AND ION-SCATTERING SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1336 - 1342

[2] ION ENHANCED REACTIVE ETCHING OF TUNGSTEN SINGLE-CRYSTALS AND FILMS WITH XEF2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1921 - 1924

[3] THE ROLE OF ENERGETIC ION-BOMBARDMENT IN SILICON-FLUORINE CHEMISTRY [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 27 (01) : 243 - 248

[4] STUDIES ON THE MECHANISM OF CHEMICAL SPUTTERING OF SILICON BY SIMULTANEOUS EXPOSURE TO CL-2 AND LOW-ENERGY AR+ IONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1384 - 1392

[5] STUDIES OF CHEMI-LUMINESCENCE ACCOMPANYING FLUORINE ATOM ETCHING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5273 - 5276

[6] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[7] MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 174 - 176

[8] ON THE RELATIVE IMPORTANCE OF PHYSICAL AND CHEMICAL SPUTTERING DURING ION-ENHANCED ETCHING OF SILICON BY XEF2 [J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1838 - 1840

[9] ARGON-ION ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3813 - 3818

[10] LEE YH, 1985, APPL PHYS LETT, V46, P260, DOI 10.1063/1.95918