IMPROVING THE ACCURACY OF THE CHARGE-SHEET MODEL FOR THE LONG-CHANNEL METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

被引：0

作者：

TARR, NG

机构：

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D O I：

10.1139/p87-159

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：995 / 998

页数：4

共 9 条

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PAO HC, 1965, IEEE T ELECTRON DEV, V12, P139

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[8]

SZE SM, 1982, PHYSICS SEMICONDUCTO, P368

[9] LONG-CHANNEL MOSFET MODEL [J].

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