NEW PLASMA DEPOSITION PROCESS OF AMORPHOUS GAXAS1-X IN AN RF CAPACITIVELY COUPLED DIODE SYSTEM

被引：9

作者：

DESPAX, B

AGUIR, K

SEGUI, Y

机构：

来源：

THIN SOLID FILMS | 1986年 / 145卷 / 02期

关键词：

D O I：

10.1016/0040-6090(86)90372-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：233 / 240

页数：8

共 10 条

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[4]

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[7] AMORPHOUS GAAS FILMS BY MOLECULAR-BEAM DEPOSITION [J].

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[8] EFFECT OF VACANCIES ON ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS GALLIUM-ARSENIDE FILMS [J].

NARASIMHAN, KL ;

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[9]

PAUL W, 1977, 7TH P INT C AM SEM E, P426

[10]

SMITH JE, 1971, LIGHT SCATTERING SOL

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