CORRELATION OF OXYGEN CONCENTRATION AND ACTIVATED OXYGEN DONORS IN SILICON-CRYSTALS ON A MICROSCALE

被引：18
作者：
RAVA, P
GATOS, HC
LAGOWSKI, J
机构：
来源：
APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 04期
关键词：
D O I：
10.1063/1.92304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：274 / 276
页数：3
相关论文
共 13 条
[1]   INFLUENCE OF OXYGEN ON SILICON RESISTIVITY [J].
CAZCARRA, V ;
ZUNINO, P .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4206-4211
[2]  
DEKOCK AJR, 1973, PHILIPS RES REP S1
[3]  
GRAFF K, 1977, SEMICONDUCTOR SILICO, P575
[4]  
HELMREICH D, 1977, SEMICONDUCTOR SILICO, P626
[5]   QUANTITATIVE-DETERMINATION OF THE CARRIER CONCENTRATION DISTRIBUTION IN SEMICONDUCTORS BY SCANNING IR ABSORPTION - SI [J].
JASTRZEBSKI, L ;
LAGOWSKI, J ;
GATOS, HC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) :260-263
[6]   MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].
KAISER, W ;
FRISCH, HL ;
REISS, H .
PHYSICAL REVIEW, 1958, 112 (05) :1546-1554
[7]   MICRO-DISTRIBUTION OF OXYGEN IN SILICON [J].
MURGAI, A ;
CHI, JY ;
GATOS, HC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (05) :1182-1186
[8]   EFFECT OF MICROSCOPIC GROWTH-RATE ON OXYGEN MICROSEGREGATION AND SWIRL DEFECT DISTRIBUTION IN CZOCHRALSKI-GROWN SILICON [J].
MURGAI, A ;
GATOS, HC ;
WESTDORP, WA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (12) :2240-2245
[9]   DETERMINATION OF OXYGEN CONCENTRATION PROFILES IN SILICON-CRYSTALS OBSERVED BY SCANNING IR ABSORPTION USING SEMICONDUCTOR-LASER [J].
OHSAWA, A ;
HONDA, K ;
OHKAWA, S ;
UEDA, R .
APPLIED PHYSICS LETTERS, 1980, 36 (02) :147-148
[10]   PRECIPITATION AND REDISTRIBUTION OF OXYGEN IN CZOCHRALSKI-GROWN SILICON [J].
SHIMURA, F ;
TSUYA, H ;
KAWAMURA, T .
APPLIED PHYSICS LETTERS, 1980, 37 (05) :483-486
12