DISLOCATION CONTENT IN EPITAXIALLY VAPOR-GROWN GE CRYSTALS

被引：11

作者：

INGHAM, HS

MCDADE, PJ

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1960年 / 4卷 / 03期

关键词：

D O I：

10.1147/rd.43.0302

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：302 / 304

页数：3

共 14 条

[1] RADIOTRACER STUDIES OF THE INCORPORATION OF IODINE INTO VAPOR-GROWN GE [J].

BAKER, WE ;

COMPTON, DMJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :269-274

[2] SINGLE CRYSTALS OF EXCEPTIONAL PERFECTION AND UNIFORMITY BY ZONE LEVELING [J].

BENNETT, DC ;

SAWYER, B .

BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03) :637-660

[3] SOME DEFECTS IN CRYSTALS GROWN FROM THE MELT .1. DEFECTS CAUSED BY THERMAL STRESSES [J].

BILLIG, E .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 235 (1200) :37-+

[4] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].

BURTON, WK ;

CABRERA, N ;

FRANK, FC .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358

[5] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :459-474

[6]

DUNLAP WC, 1956, B AM PHYS SOC, V1, P294

[7] DISLOCATIONS AT COMPOSITIONAL FLUCTUATIONS IN GERMANIUM-SILICON ALLOYS [J].

GOSS, AJ ;

BENSON, KE ;

PFANN, WG .

ACTA METALLURGICA, 1956, 4 (03) :332-333

[8]

GREEN M, 1959, 2ND C SEM SURF WHIT

[9] STUDIES OF INDIVIDUAL DISLOCATIONS IN CRYSTALS BY X-RAY DIFFRACTION MICRORADIOGRAPHY [J].

LANG, AR .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) :1748-1755

[10] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J].

MARINACE, JC .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :248-255

← 1 2 →