GROWTH OF SOLID-SOLUTIONS OF ALUMINUM NITRIDE AND SILICON-CARBIDE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：25
作者：
JENKINS, I
IRVINE, KG
SPENCER, MG
DMITRIEV, V
CHEN, N
机构：
[1] HOWARD UNIV,SCH ENGN,DEPT ELECT ENGN,MAT SCI RES CTR EXCELLENCE,WASHINGTON,DC 20059
[2] I F IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0022-0248(93)90351-V
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report the growth of solid solutions of (AlN)x(SiC)1-x over the entire composition range from x = 0.1 to x = 0.9. We believe this is the first report of solid solution of (AlN)x(SiC)1-x by metalorganic vapor deposition. Growth was performed in a low pressure vertical reactor using the silane-propane-ammonia-trimethylaluminium-hydrogen gas system on both silicon and silicon carbide substrates. Growth temperatures were between 1200 and 1250-degrees-C and groWth pressures varied between 10 and 76 Torr. The composition of the solid solutions were strongly dependent on system pressure.
引用
收藏
页码：375 / 378
页数：4
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