IMPURITY-BAND DENSITY OF STATES IN HEAVILY DOPED SEMICONDUCTORS - A VARIATIONAL CALCULATION

被引：36
作者：
SAYAKANIT, V [1 ]
GLYDE, HR [1 ]
机构：
[1] UNIV OTTAWA, DEPT PHYS, OTTAWA K1N 6N5, ONTARIO, CANADA
来源：
PHYSICAL REVIEW B | 1980年 / 22卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.22.6222
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6222 / 6232
页数：11
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