EFFECT OF TIP ATOMIC AND ELECTRONIC-STRUCTURE ON SCANNING TUNNELING MICROSCOPY SPECTROSCOPY

被引:0
作者
TSUKADA, M [1 ]
KOBAYASHI, K [1 ]
ISSHIKI, N [1 ]
机构
[1] KAO CORP,KAO INST KNOWLEDGE & INTELLIGENCE SCI,SUMIDA KU,TOKYO 131,JAPAN
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D O I
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中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The current image and the tunnel conductance in the scanning tunneling microscopy/spectroscopy (STM/STS) of graphite are simulated by the first-principles local density functional calculation of the electronic states. As models of the tip, W10[111], W14[110], W13[110] and Pt10[111] clusters are used. For the tips with a single apex atom, normal STM images are obtained. However, abnormal images are generated by the removal of the apex atom. STS spectra are changed in a systematic way by the apex angle of the tip. The negative differential resistance observed in the STS of the Si(111) square-root 3 x square-root 3-B/ defect surface is reproduced by the theoretical simulation with the cluster models of the tip.
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页码:12 / 17
页数:6
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