APPARATUS FOR MEASURING RELAXATION-TIME IN SEMICONDUCTOR DIODES AND P-N TRANSITIONS

被引:0
|
作者
BLAGOVES.VS
机构
来源
关键词
D O I
暂无
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:205 / &
相关论文
共 50 条
  • [31] SEMICONDUCTOR P-N JUNCTION RADIATION COUNTER
    SALZBERG, B
    SIEGEL, K
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (08): : 1536 - 1536
  • [32] The thermoelectric power of a semiconductor p-n heterojunction
    M. M. Gadzhialiev
    Z. Sh. Pirmagomedov
    Semiconductors, 2003, 37 : 1296 - 1298
  • [33] ON THE RELAXATION-TIME HIERARCHY IN DISSIPATIVE SYSTEMS - AN EXAMPLE FROM SEMICONDUCTOR PHYSICS
    VASCONCELLOS, AR
    ALGARTE, AC
    LUZZI, R
    PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, 1990, 166 (03) : 517 - 539
  • [34] Performance of InGaAs photodetectors: Lateral p-n and p-n-p diodes
    Klockenbrink, R
    Peiner, E
    Bartels, A
    Wehmann, HH
    Schlachetzki, A
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (12) : 1480 - 1482
  • [35] Direct probe of excitonic and continuum transitions in the photocurrent spectroscopy of individual carbon nanotube p-n diodes
    Lee, Ji Ung
    Codella, Peter J.
    Pietrzykowski, Matthew
    APPLIED PHYSICS LETTERS, 2007, 90 (05)
  • [36] A p-type amorphous oxide semiconductor and room temperature fabrication of amorphous oxide p-n heterojunction diodes
    Narushima, S
    Mizoguchi, H
    Shimizu, K
    Ueda, K
    Ohta, H
    Hirano, M
    Kamiya, T
    Hosono, H
    ADVANCED MATERIALS, 2003, 15 (17) : 1409 - 1413
  • [38] LATERAL POLYSILICON P-N DIODES IN CMOS TECHNOLOGY
    DUTOIT, M
    SOLLBERGER, F
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C303 - C303
  • [39] Universality of Zener tunneling in homojunction p-n diodes
    Majumdar, Amlan
    Lauer, Isaac
    O'Regan, Terrance
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (02)
  • [40] METAL P-N SCHOTTKY-BARRIER DIODES
    VANDERZIEL, A
    SOLID-STATE ELECTRONICS, 1977, 20 (03) : 269 - 272