PREPARATION AND PROPERTIES OF (PB,LA)(ZR,TI)O3 THIN-FILMS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引:64
作者
OKADA, M
TOMINAGA, K
机构
[1] Department of Industrial Chemistry, Faculty of Engineering, Chubu University 1200, Matsumotocho Kasugai
关键词
D O I
10.1063/1.351190
中图分类号
O59 [应用物理学];
学科分类号
摘要
Lanthanum-modified lead zirconate titanate (PLZT) thin films have been grown on Pt/MgO(100) and Pt/SiO2/Si substrates at 650-degrees-C by metalorganic chemical vapor deposition using Pb(C2H5)4, La(DPM)3, Zr(DPM)4 and Ti(i - OC3H7)4 as the source materials. The properties of PLZT films were investigated as a function of the La content in a range of 0-15 at.% with a composition ratio of Zr/(Zr + Ti) < 0.5. The films were of a single perovskite structure, and highly oriented to the c axis of the tetragonal phase on a Pt/MgO(100) substrate. The films were transformed from tetragonal to nearly cubic as the La content was increased. The films were colorless and transparent, and the surface morphology became smoother through an La addition. The relative dielectric constants increased as the La content was increased up to about 5 at.%. The remanent polarizations were 25-30-mu-C/cm2, and the coercive field decreased from 53 to 30 kV/cm as the La content was increased in the films having Zr/Ti = 40/60.
引用
收藏
页码:1955 / 1959
页数:5
相关论文
共 12 条
  • [1] ADACHI H, 1986, J APPL PHYS, V60, P36
  • [2] AN EXPERIMENTAL 512-BIT NONVOLATILE MEMORY WITH FERROELECTRIC STORAGE CELL
    EVANS, JT
    WOMACK, R
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (05) : 1171 - 1175
  • [3] EPITAXIAL-GROWTH AND THE CRYSTALLOGRAPHIC, DIELECTRIC, AND PYROELECTRIC PROPERTIES OF LANTHANUM-MODIFIED LEAD TITANATE THIN-FILMS
    IIJIMA, K
    TAKAYAMA, R
    TOMITA, Y
    UEDA, I
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) : 2914 - 2919
  • [4] EPITAXIAL-GROWTH OF FERROELECTRIC PLZT [(PB,LA)(ZR,TI)O3] THIN-FILMS
    ISHIDA, M
    TSUJI, S
    KIMURA, K
    MATSUNAMI, H
    TANAKA, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 393 - 398
  • [5] PREPARATION AND PROPERTIES OF FERROELECTRIC PLZT THIN-FILMS BY RF SPUTTERING
    ISHIDA, M
    MATSUNAMI, H
    TANAKA, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 951 - 953
  • [6] FERROELECTRIC PROPERTIES OF RF SPUTTERED PLZT THIN-FILM
    NAKAGAWA, T
    YAMAGUCHI, J
    USUKI, T
    MATSUI, Y
    OKUYAMA, M
    HAMAKAWA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (05) : 897 - 902
  • [7] PREPARATION OF C-AXIS-ORIENTED PBTIO3 THIN-FILMS BY MOCVD UNDER REDUCED PRESSURE
    OKADA, M
    TAKAI, S
    AMEMIYA, M
    TOMINAGA, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (06): : 1030 - 1034
  • [8] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF C-AXIS ORIENTED PZT THIN-FILMS
    OKADA, M
    TOMINAGA, K
    ARAKI, T
    KATAYAMA, S
    SAKASHITA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (04): : 718 - 722
  • [9] OKADA M, 1988, J CERAM SOC JPN, V96, P676
  • [10] PREPARATION AND ELECTRICAL-PROPERTIES OF MOCVD-DEPOSITED PZT THIN-FILMS
    SAKASHITA, Y
    ONO, T
    SEGAWA, H
    TOMINAGA, K
    OKADA, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (12) : 8352 - 8357