NONOSCILLATORY MAGNETORESISTANCE IN CO/CU/CO LAYERED STRUCTURES WITH OSCILLATORY COUPLING

被引：80

作者：

SPERIOSU, VS

DIENY, B

HUMBERT, P

GURNEY, BA

LEFAKIS, H

机构：

[1] UNIV STRASBOURG 1,CNRS,IPCMS UM,F-67070 STRASBOURG,FRANCE

[2] CNRS,LAB LOUIS NEEL,F-38042 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.44.5358

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using sputtered thin-film layered structures comprising Si/[8x(20-angstrom Ru/x Cu)]/(30-angstrom Co)/(t(Cu) Cu/30-angstrom Co)/(150-angstrom Fe50Mn50), with x = 8 and 12 angstrom, we demonstrate that the oscillation in the coupling of the two Co layers as the Cu-layer thickness, t(Cu), is varied, is not accompanied by an oscillation in the amplitude of the magnetoresistance. Thus the previously reported oscillation in magnetoresistance in Fe/Cr, Co/Ru, Co/Cr, and Co/Cu multilayers is not a fundamental electronic effect, but a consequence of the inability to vary consistently the angles between the magnetizations of these multilayers.

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页码：5358 / 5361

页数：4

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