CURRENT CONDUCTION AND RELIABILITY IMPLICATIONS UNDER CURRENT RAMPING STRESS OF VLSI CONTACTS

被引：1
|
作者：
SUN, SW
FU, KY
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 03期
关键词：
D O I：
10.1109/55.31690
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：126 / 128
页数：3
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