FREQUENCY INCREASE IN PULSED AVALANCHE-DIODES

被引：0
作者：
STATZ, H
WALLACE, RN
机构：
[1] Raytheon Research Division, Waltham
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 07期
关键词：
D O I：
10.1109/T-ED.1979.19546
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have tested many GaAs IMPATT diodes under high-power pulsed conditions and found that the best power output and ef-ficiency occur at higher frequencies in the pulsed mode than in the CW mode. This phenomenon can be understood by considering the efiect on the avalanche region field produced by the space charge of the carriers injected into the drift zone. Qualitative agreement is dem on strated between theory and experiment. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
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页码：1064 / 1067
页数：4
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