ANALYSIS OF BORON PRE-DEPOSITED SILICON WAFERS BY COMBINED ION-BEAM TECHNIQUES AND X-RAY MICROANALYSIS

被引：12

作者：

ARMIGLIATO, A ^{[1
]}

BENTINI, GG ^{[1
]}

RUFFINI, G ^{[1
]}

BATTAGLIN, G ^{[1
]}

DELLAMEA, G ^{[1
]}

DRIGO, AV ^{[1
]}

机构：

[1] IST FIS G GALILEI,VIA MARZOLO 8,I-35100 PADOVA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS | 1978年 / 149卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(78)90945-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：653 / 658

页数：6

共 14 条

[1] ENERGY-LEVELS OF LIGHT-NUCLEI A= 13-15 [J].

AJZENBERGSELOVE, F .

NUCLEAR PHYSICS A, 1976, 268 (01) :1-204

[2]

[Anonymous], ELECT MICROPROBE

[3] INTERFACE REACTION OF B2O3-SI SYSTEM AND BORON DIFFUSION INTO SILICON [J].

ARAI, E ;

TERUNUMA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) :980-987

[4]

ARMIGLIATO A, SEMICONDUCTOR SILICO, P638

[5]

Chu W.K., 1977, BACKSCATTERING SPECT

[6] ANALYSIS OF SURFACE-LAYERS BY CHANNELING TECHNIQUE - BEAM ENERGY-DEPENDENCE [J].

DELLAMEA, G ;

DRIGO, AV ;

LORUSSO, S ;

MAZZOLDI, P ;

YAMAGUCHI, S ;

BENTINI, GG .

APPLIED PHYSICS LETTERS, 1975, 26 (04) :147-150

[7]

HENKE BL, 1967, NORELCO REP, V14, P112

[8]

HEYNES MSR, 1967, ELECTROCHEM TECHNOL, V5, P25

[9]

KIEWIT DA, 1977, SPR EL SOC M PHIL, P240

[10] AUGER INVESTIGATION OF BORON-DOPED SIO2-SI [J].

MOORE, G ;

GUCKEL, H ;

LAGALLY, MG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :70-74

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