LIFETIME CONTROL IN SILICON POWER DEVICES BY ELECTRON OR GAMMA-IRRADIATION

被引：64

作者：

CARLSON, RO

SUN, YS

ASSALIT, HB

机构：

[1] GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA

[2] GE, DEPT SEMICONDUCTOR PROD, SCHENECTADY, NY 12301 USA

[3] GE, STAT POWER COMPONENTS OPERAT, SCHENECTADY, NY 12301 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 08期

关键词：

D O I：

10.1109/T-ED.1977.18884

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1103 / 1108

页数：6

共 10 条

[1]

BALIGA BJ, 1976, DEC IEEE INT EL DEV, P495

[2] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J].

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1965, 138 (2A) :A555-&

[3]

CORBETT JW, 1966, ELECTRON RADIATION D

[4]

EVWARAYE AO, 1976, FAL M EL SOC LAS VEG

[5]

GENTRY FE, 1964, SEMICONDUCTOR CONTRO

[6] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[7] A 2 LEVEL MODEL FOR LIFETIME REDUCTION PROCESSES IN NEUTRON IRRADIATED SILICON AND GERMANIUM [J].

MESSENGER, GC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :88-+

[8] ELECTRON-IRRADIATION INDUCED RECOMBINATION CENTERS IN SILICON-MINORITY CARRIER LIFETIME CONTROL [J].

RAICHOUDHURY, P ;

BARTKO, J ;

JOHNSON, JE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) :814-818

[9]

SCOUR JR, 1975, IEEE T NUCL SCI, V22, P2656

[10]

VITMAN RF, 1975, SOV PHYS SEMICOND+, V9, P220

← 1 →