INFLUENCE OF PRECIPITATION ON PHOSPHORUS DIFFUSIVITY IN SILICON

[1] PRECIPITATION AND DIFFUSIVITY OF ARSENIC IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2726 - 2730

[2] GROWTH OF STACKING-FAULTS AND DISLOCATIONS INDUCED IN SILICON BY PHOSPHORUS PREDEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1806 - 1812

[3] HREM OF SIP PRECIPITATES AT THE (111) SILICON SURFACE DURING PHOSPHORUS PREDEPOSITION [J]. ULTRAMICROSCOPY, 1984, 14 (1-2) : 97 - 106

[4] ANODIC-OXIDATION OF POLYSILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1062 - 1064

[5] DAMAGE RECOVERY AND DOPANT ACTIVATION PHENOMENA IN HEAVILY ARSENIC-IMPLANTED SILICON [J]. THIN SOLID FILMS, 1985, 129 (1-2) : 111 - 125

[6] EFFECT OF THERMAL NITRIDATION PROCESSES ON BORON AND PHOSPHORUS DIFFUSION IN (100) SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 683 - 685

[7] KINETICS OF THERMAL NITRIDATION PROCESSES IN THE STUDY OF DOPANT DIFFUSION MECHANISMS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 784 - 786

[8] SUPERSATURATION OF SELF-INTERSTITIALS AND UNDERSATURATION OF VACANCIES DURING PHOSPHORUS DIFFUSION IN SILICON [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 777 - 779

[9] FAHEY P, 1983, J APPL PHYS, V54, P6912

[10] ELECTRICAL-PROPERTIES AND STABILITY OF SUPERSATURATED PHOSPHORUS-DOPED SILICON LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) : 1313 - 1317

[1] PRECIPITATION AND DIFFUSIVITY OF ARSENIC IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2726 - 2730

[2] GROWTH OF STACKING-FAULTS AND DISLOCATIONS INDUCED IN SILICON BY PHOSPHORUS PREDEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1806 - 1812

[3] HREM OF SIP PRECIPITATES AT THE (111) SILICON SURFACE DURING PHOSPHORUS PREDEPOSITION [J]. ULTRAMICROSCOPY, 1984, 14 (1-2) : 97 - 106

[4] ANODIC-OXIDATION OF POLYSILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1062 - 1064

[5] DAMAGE RECOVERY AND DOPANT ACTIVATION PHENOMENA IN HEAVILY ARSENIC-IMPLANTED SILICON [J]. THIN SOLID FILMS, 1985, 129 (1-2) : 111 - 125

[6] EFFECT OF THERMAL NITRIDATION PROCESSES ON BORON AND PHOSPHORUS DIFFUSION IN (100) SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 683 - 685

[7] KINETICS OF THERMAL NITRIDATION PROCESSES IN THE STUDY OF DOPANT DIFFUSION MECHANISMS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 784 - 786

[8] SUPERSATURATION OF SELF-INTERSTITIALS AND UNDERSATURATION OF VACANCIES DURING PHOSPHORUS DIFFUSION IN SILICON [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 777 - 779

[9] FAHEY P, 1983, J APPL PHYS, V54, P6912

[10] ELECTRICAL-PROPERTIES AND STABILITY OF SUPERSATURATED PHOSPHORUS-DOPED SILICON LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) : 1313 - 1317