DEPLETION-MODE IGFET MADE BY DEEP ION-IMPLANTATION

被引：34
作者：
EDWARDS, JR [1 ]
MARR, G [1 ]
机构：
[1] BELL TEL LABS INC,ALLENTOWN,PA 18103
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 03期
关键词：
D O I：
10.1109/T-ED.1973.17641
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：283 / 289
页数：7
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