INCORPORATION OF GROUP-III AND GROUP-V ELEMENTS IN CHEMICAL BEAM EPITAXY OF GAINASP ALLOYS

被引：41

作者：

BENCHIMOL, JL

LEROUX, G

THIBIERGE, H

DAGUET, C

ALEXANDRE, F

BRILLOUET, F

机构：

[1] Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, F-92220 Bagneux

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90590-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of GaInAsP alloys by chemical beam epitaxy is investigated. The incorporation of group III and group V elements in the alloy and its dependence on growth temperature is studied over the whole range of compositions lattice-matched to InP. GaInAsP/InP double heterostructure lasers were fabricated showing threshold current densities of 2 kA/cm2.

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页码：978 / 981

页数：4

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