THERMAL OXIDATION OF POLYCRYSTALLINE SILICON FILMS

被引:29
作者
KAMINS, TI
MACKENNA, EL
机构
来源
METALLURGICAL TRANSACTIONS | 1971年 / 2卷 / 08期
关键词
D O I
10.1007/BF02917568
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
引用
收藏
页码:2292 / &
相关论文
共 3 条
[1]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[2]   SILICON GATE TECHNOLOGY [J].
FAGGIN, F ;
KLEIN, T .
SOLID-STATE ELECTRONICS, 1970, 13 (08) :1125-&
[3]   TEXTURAL CHARACTERISTICS AND ELECTRICAL PROPERTIES OF VACUUM EVAPORATED SILICON FILMS [J].
MOUNTVAL.AJ ;
ABOWITZ, G .
VACUUM, 1965, 15 (07) :359-&